 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRF230 TO-3 (TO-204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 - Gate Pin 2 - Source 0.97 (0.060) 1.10 (0.043) Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VDGR ID ID IDM VGS PD ILM EAS* TJ , TSTG TL Drain - Source Voltage1 Drain - Gate Voltage (RGS = 20KW)1 Continuous Drain Current@ Tcase = 25C Continuous Drain Current@ Tcase = 100C Pulsed Drain Current 3 Gate - Source Voltage Maximum Power Dissipation @ Tcase = 25C Derate Linearly Inductive Current Clamped Single Pulse Avalanche energy Rating 4 200 200 9.0 6.0 36 20 75 0.6 36 150 -55 to 150 300 V V A A A V W W/C A mj C C Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. THERMAL CHARACTERISTICS Characteristic RqJC RqCS RqJA NOTES 1 TJ = +25C to + 150C 2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2% 3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature. 4 VDD = 20V starting TJ = +25C , L = 3.37mH, RGS = 50W, IPEAK = 9A Junction to Case Case to Sink (Mounting Surface flat, smooth and greased. Junction to Ambient (Free air operation) 0.1 30 Min. Typ. Max. Unit 1.67 C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 6/00 IRF230 ELECTRICAL (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage IGSS IGSS IDSS Gate Source Leakage forward Gate Source Leakage Reverse Zero Gate Voltage Drain Current VGS = 0V , ID = 250mA VDS = VGS , ID = 250mA VGS = 20V VGS = -20V VDS = Max rating VGS=0V ID(ON)2 On-State Drain Current VGS = 10V IDS = 5.0A ID =5.0A 3.0 VGS=0V VDS = Max rating x0.8, TJ = +125C 9 0.25 4.8 600 250 80 ID = 9A 19 10 9.0 35 VDD*100V, RG = 7.5W ID = 5.0A, 80 60 40 ns 30 nC pF 0.4 VDS> ID(ON) xrDS(ON) Max. 200 2 4 100 -100 250 1000 mA Test Conditions Min. Typ. Max. Unit V V nA A W rDS(ON)2 Static Drain-Source On State Resistance VGS = 10V , Forward Transconductance gts2 VDS> 50V DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS IS ISM VSD trr Qrr tON LD LS VGS = 0V, f = 1MHz VGS = 10V VDS = 0.8 VMax S(W) VDS = 25V Continuous Source Current (Body Diode) Modified MOSFET symbol showing the integral Pulsed Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance (from 6mm down source lead to source bond pad) 9.0 A 36 2.0 450 3.0 NEGLIGIBLE 5.0 12.5 V ns mC reverse P-N junc. rectifier. TJ = +25C , VGS = 0V TJ = +150C , TJ = +150C , IS = 9A IS = 9A VGS = 0V dlF/dt = 100A/ms VGS = 0V dlF/dt = 100A/ms IS = 9A nH Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 6/00 |
Price & Availability of IRF230
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |